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ds30347 rev. 3 - 2 1 of 8 dcx (xxxx) u www.diodes.com diodes incorporated epitaxial planar die construction built-in biasing resistors also available in lead free version characteristic symbol value unit supply voltage, (3) to (1) v cc 50 v input voltage, (2) to (1) dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU dcx143tu dcx114tu v in -10 to +40 -10 to +40 -6 to +40 -5 to +12 -10 to +40 -5 vmax -5 vmax v output current dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU dcx143tu dcx114tu i o 30 30 70 100 50 100 100 ma output current all i c (max) 100 ma power dissipation (total) p d 200 mw thermal resistance, junction to ambient air (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings npn section @ t a = 25 c unless otherwise specified a m j l d b c h k g f cxx ym mechanical data case: sot-363, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 4, on page 3 terminal connections: see diagram marking: date code and marking code (see diagrams & page 4) weight: 0.006 grams (approx.) ordering information (see page 3) t c u d o r p w e n p/n r1 r2 marking dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU dcx143tu dcx114tu 22k 47k 10k 2.2k 10k 4.7k 10k 22k 47k 47k 47k 10k - - c17 c20 c14 c06 c13 c07 c12 r 1 r 1 r 2 r 2 r 1 r 1 r 1 , r 2 r 1 only schematic diagram dcx (xxxx) u complementary npn/pnp pre-biased small signal sot-363 dual surface mount transistor sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm note: 1. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. 150mw per element must not be exceeded.
ds30347 rev. 3 - 2 2 of 8 dcx (xxxx) u www.diodes.com characteristic symbol min typ max unit test condition input voltage dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU v l(off) 0.5 0.5 0.3 0.5 0.5 1.1 1.1 1.1 v v cc = 5v, i o = 100 a dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU v l(on) 1.9 1.9 1.9 3.0 3.0 1.4 1.1 3.0 v o = 0.3, i o = 5ma v o = 0.3, i o = 2ma v o = 0.3, i o = 1ma v o = 0.3, i o = 5ma v o = 0.3, i o = 10ma output voltage dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU v o(on) 0.1 0.3 v i o /i l = 10ma / 0.5ma i o /i l = 10ma / 0.5ma i o /i l = 5ma / 0.25ma i o /i l = 5ma / 0.25ma i o /i l = 10ma / 0.5ma input current dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU i l 0.36 0.18 0.88 3.6 0.88 ma v i = 5v output current i o(off) 0.5 a v cc = 50v, v i = 0v dc current gain dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU g l 56 68 68 80 30 v o = 5v, i o = 5ma v o = 5v, i o = 5ma v o = 5v, i o = 10ma v o = 5v, i o = 10ma v o = 5v, i o = 5ma input resistor (r 1 ) tolerance
r 1 -30 +30 % resistance ratio tolerance r 2 /r 1 -20 +20 gain-bandwidth product* f t 250 mhz v ce = 10v, i e = 5ma, f = 100mhz t c u d o r p w e n * transistor - for reference only characteristic (ddc143tu & ddc114tu only) symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 v i c = 50 a collector-emitter breakdown voltage bv ceo 50 v i c = 1ma emitter-base breakdown voltage bv ebo 5 v i e = 50 a collector cutoff current i cbo 0.5 a v cb = 50v emitter cutoff current i ebo 0.5 a v eb = 4v collector-emitter saturation voltage v ce(sat) 0.3 v i c /i b = 2.5ma / 0.25ma dcx143tu i c /i b = 1ma / 0.1ma dcx114tu dc current transfer ratio h fe 100 250 600 i c = 1ma, v ce = 5v input resistor (r 1 ) tolerance
r 1 -30 +30 % gain-bandwidth product* f t 250 mhz v ce = 10v, i e = -5ma, f = 100mhz characteristic symbol value unit supply voltage, (3) to (1) v cc 50 v input voltage, (2) to (1) dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU dcx143tu dcx114tu v in +10 to -40 +10 to -40 +6 to -40 +5 to -12 +10 to -40 +5 vmax +5 vmax v output current dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU dcx143tu dcx114tu i o -30 -30 -70 -100 -50 -100 -100 ma output current all i c (max) -100 ma power dissipation (total) p d 200 mw thermal resistance, junction to ambient air (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c maximum ratings pnp section @ t a = 25 c unless otherwise specified note: 1. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 2. 150mw per element must not be exceeded. electrical characteristics npn section @ t a = 25 c unless otherwise specified
ds30347 rev. 3 - 2 3 of 8 dcx (xxxx) u www.diodes.com characteristic symbol min typ max unit test condition input voltage dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU v l(off) -0.5 -0.5 -0.3 -0.5 -0.5 -1.1 -1.1 1.1 v v cc = -5v, i o = -100 a dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU v l(on) -1.9 -1.9 -1.9 -3.0 -3.0 -1.4 -1.1 -3.0 v o = -0.3, i o = -5ma v o = -0.3, i o =- 2ma v o = -0.3, i o = -1ma v o = -0.3, i o = -5ma v o = -0.3, i o = -10ma output voltage dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU v o(on) -0.1 -0.3 v i o /i l = -10ma / -0.5ma i o /i l = -10ma / -0.5ma i o /i l = -5ma / -0.25ma i o /i l = -5ma / -0.25ma i o /i l = -10ma /- 0.5ma input current dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU i l -0.36 -0.18 -0.88 -3.6 -0.88 ma v i = -5v output current i o(off) -0.5 a v cc = 50v, v i = 0v dc current gain dcx124eu dcx144eu dcx114yu dcx123ju DCX114EU g l 56 68 68 80 30 v o = -5v, i o = -5ma v o = -5v, i o = -5ma v o = -5v, i o = -10ma v o = -5v, i o = -10ma v o = -5v, i o = -5ma input resistor (r 1 ) tolerance
r 1 -30 +30 % resistance ratio tolerance r 2 /r 1 -20 +20 gain-bandwidth product* f t 250 mhz v ce = -10v, i e = -5ma, f = 100mhz * transistor - for reference only characteristic (dcx143tu & dcx114tu only) symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 v i c = -50 a collector-emitter breakdown voltage bv ceo -50 v i c = -1ma emitter-base breakdown voltage bv ebo -5 v i e = -50 a collector cutoff current i cbo -0.5 a v cb = -50v emitter cutoff current i ebo -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat) -0.3 v i c /i b = 2.5ma / 0.25ma dcx143tu i c /i b = 1ma / 0.1ma dcx114tu dc current transfer ratio h fe 100 250 600 i c = -1ma, v ce = -5v input resistor (r 1 ) tolerance
r 1 -30 +30 % gain-bandwidth product* f t 250 mhz v ce = -10v, i e = 5ma, f = 100mhz @ t a = 25 c unless otherwise specified electrical characteristics pnp section t c u d o r p w e n notes: 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number above. example: dcx114tu-7-f. device packaging shipping dcx124eu-7 sot-363 3000/tape & reel dcx144eu-7 sot-363 3000/tape & reel dcx114yu-7 sot-363 3000/tape & reel dcx123ju-7 sot-363 3000/tape & reel DCX114EU-7 sot-363 3000/tape & reel dcx143tu-7 sot-363 3000/tape & reel dcx114tu-7 sot-363 3000/tape & reel ordering information (note 3)
ds30347 rev. 3 - 2 4 of 8 dcx (xxxx) u www.diodes.com t c u d o r p w e n month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw date code key cxx = product type marking code see sheet 1 diagrams ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september cxx ym marking information
ds30347 rev. 3 - 2 5 of 8 dcx (xxxx) u www.diodes.com t c u d o r p w e n 0.1 1 10 01020304050 i , collector current (ma) c fi g . 6 input volta g e vs. collector current v = 0.2 o v , input voltage (v) in -25c 25c 75 c 0.001 0.01 1 10 100 0 1 234 89 10 i , collector current (ma) c v , input voltage (v) in fi g . 5 collector current vs. input volta g e -25c 5 67 25c 0.1 v = 5v o 75c 0 2 4 6 12 0 20 30 c , capacitance (pf) ob v , reverse bias voltage (v) r fig. 4 output capacitance 10 5 15 25 8 10 i=0v e 10 1000 100 1 10 100 h , dc current gain (normalized) fe i , collector current (ma) c fi g . 3 dc current gain v = 10 ce 75 c -25 c 25 c 0.001 0.01 0.1 1 0 10 20 30 40 50 v , maximum collector voltage (v) ce(sat) i , collector current (ma) c fig. 2 v vs. i ce ( sat ) c i/i =10 cb -25 c 75 c 25 c -50 050100150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 deratin g curve p , power dissipation (mw) d typical curves - dcx123ju pnp section
ds30347 rev. 3 - 2 6 of 8 dcx (xxxx) u www.diodes.com t c u d o r p w e n 0.1 1 10 01020304050 i , collector current (ma) c fi g . 6 input volta g e vs. collector current v = 0.2 o v , input voltage (v) in -25c 25c 75 c 0.001 0.01 1 10 100 0 1 234 89 10 i , collector current (ma) c v , input voltage (v) in fi g . 5 collector current vs. input volta g e -25c 5 67 25c 0.1 v = 5v o 75c 0 1 2 3 4 0 20 30 c , c apa c itan c e ( pf ) ob v , reverse bias voltage (v) r fig. 4 output capacitance 10 5 15 25 i = 0ma e 10 1000 100 1 10 100 h , dc current gain (normalized) fe i , collector current (ma) c fi g . 3 dc current gain v = 10 ce 75 c -25 c 25 c 0.001 0.01 0.1 1 0 10 20 30 40 50 v , maximum collector voltage (v) ce(sat) i , collector current (ma) c fig. 2 v vs. i ce ( sat ) c i/i =10 cb -25 c 75 c 25 c -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 deratin g curve p , power dissipation (mw) d typical curves - dcx123ju npn section
ds30347 rev. 3 - 2 7 of 8 dcx (xxxx) u www.diodes.com t c u d o r p w e n 1 1 10 01020304050 i , collector current (ma) c fi g . 6 input volta g e vs. collector current v = 0.2 o v , input voltage (v) in -25c 25c 75 c 0.01 0.1 1 10 100 01 2 3 4 89 10 i , collector current (ma) c v , input voltage (v) in fi g . 5 collector current vs. input volta g e -25c 5 67 75c 25c 0.001 0 1 2 3 4 0 20 30 c , c apa c itan c e ( pf ) ob v , reverse bias voltage (v) r fig. 4 output capacitance 10 5 15 25 i = 0ma e 10 1000 100 1 1 10 100 h , dc current gain (normalized) fe i , collector current (ma) c fi g . 3 dc current gain v = 10 ce 75 c -25 c 25 c 0.001 0.01 0.1 1 0 10 20 30 40 50 v , maximum collector voltage (v) ce(sat) i , collector current (ma) c fig. 2 v vs. i ce ( sat ) c i/i =10 cb -25 c 75 c 25 c -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 deratin g curve p , power dissipation (mw) d typical curves - dcx114tu pnp section
ds30347 rev. 3 - 2 8 of 8 dcx (xxxx) u www.diodes.com t c u d o r p w e n 1 1 10 01020304050 i , collector current (ma) c fi g . 6 input volta g e vs. collector current v = 0.2 o v , input voltage (v) in -25c 25c 75 c 0.01 0.1 1 10 100 01 2 3 4 89 10 i , collector current (ma) c v , input voltage (v) in fi g . 5 collector current vs. input volta g e -25c 5 67 75c 25c 0.001 0 1 2 3 4 0 20 30 c , c apa c itan c e ( pf ) ob v , reverse bias voltage (v) r fig. 4 output capacitance 10 5 15 25 i=0ma e 10 1000 100 1 1 10 100 hfe, dc current gain (normalized) i , collector current (ma) c fi g . 3 dc current gain v = 10 ce 75 c -25 c 25 c 0.001 0.01 0.1 1 0 10 20 30 40 50 v , maximum collector voltage (v) ce(sat) i , collector current (ma) c fig. 2 v vs. i ce ( sat ) c i/i =10 cb -25 c 75 c 25 c -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 deratin g curve p , power dissipation (mw) d typical curves - dcx114tu npn section

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